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TC55V16256FTI-15 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TC55V16256FTI-15
Spiegazioni elettronici  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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TC55V16256JI/FTI-12,-15
2002-01-07
3/11
DC RECOMMENDED OPERATING CONDITIONS (Ta
==== −−−−40° to 85°C)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDD
Power Supply Voltage
3.0
3.3
3.6
V
VIH
Input High Voltage
2.0
VDD + 0.3**
V
VIL
Input Low Voltage
−0.3*
0.8
V
*:
−1.0 V with a pulse width of 20%・tRC min (4 ns max)
**: VDD + 1.0 V with a pulse width of 20%・tRC min (4 ns max)
DC CHARACTERISTICS (Ta
==== −−−−40° to 85°C, VDD ==== 3.3 V ±±±± 0.3 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
IIL
Input Leakage Current
(Except NU pin)
VIN = 0 to VDD
−1
1
µA
ILO
Output Leakage
Current
CE
= VIH or WE = VIL or OE = VIH,
VOUT = 0 to VDD
−1
1
µA
VIN = 0 to 0.8 V
−1
20
II (NU)
Input Current
(NU pin)
VIN = 0 to 0.2 V
−1
1
µA
IOH = −2 mA
2.4
VOH
Output High Voltage
IOH = −100 µA
VDD − 0.2
IOL = 2 mA
0.4
VOL
Output Low Voltage
IOL = 100 µA
0.2
V
tcycle = 12 ns
230
tcycle = 15 ns
200
tcycle = 20 ns
170
IDDO
Operating Current
CE
= VIL, IOUT = 0 mA,
OE
= VIH,
Other Input
= VIH/VIL
tcycle = 25 ns
150
mA
IDDS1
CE
= VIH, Other Input = VIH or VIL
55
IDDS2
Standby Current
CE
= VDD − 0.2 V, Other Input = VDD − 0.2 V or 0.2 V
10
mA
CAPACITANCE (Ta
==== 25°C, f ==== 1 .0 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
CIN
Input Capacitance
VIN = GND
6
pF
CI/O
Input/Output Capacitance
VI/O = GND
8
pF
Note:
This parameter is periodically sampled and is not 100% tested.


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