LF2802A_17 datasheet(1/4 Pages) MA-COM

Il numero della parte	LF2802A

Spiegazioni elettronici	RF Power MOSFET Transistor

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Produttore elettronici	MA-COM [M/A-COM Technology Solutions, Inc.]

Homepage	http://www.macomtech.com

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RF Power MOSFET Transistor

2 W, 500 - 1000 MHz, 28 V

Rev. V1

LF2802A

1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

1

Package Outline

Features

 N-Channel enhancement mode device

 DMOS structure

 Lower capacitances for broadband operation

 Common source configuration

 Lower noise floor

 Applications

Broadband linear operation

500 MHz to 1400 MHz

 RoHS Compliant

Parameter

Rating

Symbol

Units

Drain-Source Voltage

65

VDS

V

Gate-Source Voltage

20

VGS

V

Drain-Source Current

0.7

IDS

A

Power Dissipation

8

PD

W

Junction Temperature

200

TJ

°C

Storage Temperature

-55 to +150

TSTG

°C

Thermal Resistance

21.8

θJC

°C/W

Parameter

Symbol

Min

Max

Units

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

65

-

V

VGS = 0.0 V , IDS = 1.0 mA

Drain-Source Leakage Current

IDSS

-

0.5

mA

VGS = 28.0 V , VGS = 0.0 V

Gate-Source Leakage Current

IGSS

-

0.5

µA

VGS = 20.0 V , VDS = 0.0 V

Gate Threshold Voltage

VGS(TH)

2.0

6.0

V

VDS = 10.0 V , IDS = 5.0 mA

Forward Transconductance

GM

40

-

mS

VDS = 28.0 V , IDS = 50.0 mA , Δ VGS = 1.0V, 80 μs Pulse

Input Capacitance

CISS

-

3.5

pF

VDS = 28.0 V , F = 1.0 MHz

Output Capacitance

COSS

-

3.75

pF

VDS = 28.0 V , F = 1.0 MHz

Reverse Capacitance

CRSS

-

1.2

pF

VDS = 28.0 V , F = 1.0 MHz

Power Gain

GP

10

-

dB

VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz

Drain Efficiency

ŋD

40

-

%

VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz

Load Mismatch Tolerance

VSWR-T

-

20:1

-

VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz

MILLIMETERS

INCHES

LETTER

DIM.

MIN

MAX

MIN

MAX

A

20.70

20.96

.815

.825

B

14.35

14.61

.565

.575

C

13.72

14.22

.540

.560

D

6.27

6.53

.247

.257

E

6.22

6.48

.245

.255

F

6.22

6.48

.245

.255

G

1.14

1.40

.045

.055

H

2.92

3.18

.115

.125

J

1.40

1.65

.055

.065

K

1.96

2.46

.077

.097

L

3.61

4.37

.142

.172

M

.08

.15

.003

.006

F (MHz)

ZIN (Ω)

ZLOAD (Ω)

500

10.0 - j41.5

40.0 +j53.0

1000

4.2 - j12.0

11.85 + j33.0

1400

3.5 - j1.0

7.5 + j23.3

VDD = 28V, IDQ = 25mA, POUT = 2.0 W

ZIN is the series equivalent input impedance of the device from

gate to source.

ZLOAD is the optimum series equivalent load impedance as

measured from drain to ground.

Electrical Characteristics @ 25°C

Absolute Maximum Ratings @ 25°C

Typical Device Impedance

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