SI5853DC-T1 datasheet(4/6 Pages) VISHAY

Il numero della parte	SI5853DC-T1

Spiegazioni elettronici	P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

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Si5853DC

Vishay Siliconix

www.vishay.com

2-4

Document Number: 71239

S-21251—Rev. B, 05-Aug-02

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

MOSFET

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.0

0.1

0.2

0.3

0.4

01

2

3

45

TJ = 150_C

ID =2.7 A

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD -- Source-to-Drain Voltage (V)

VGS -- Gate-to-Source Voltage (V)

TJ =25_C

0

30

50

10

20

Single Pulse Power

Time (sec)

40

1

100

600

10

10--1

10--2

10--4 10--3

10--3

10--2

1

10

600

10--1

10--4

100

--0.2

--0.1

0.0

0.1

0.2

0.3

0.4

--50

--25

0

25

50

75

100

125

150

ID = 250 mA

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Threshold Voltage

TJ -- Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA =90_C/W

3. TJM -- TA =PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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