MMBD452 datasheet(1/3 Pages) BILIN

Il numero della parte	MMBD452

Spiegazioni elettronici	Dual Hot-Carrier Diodes

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Produttore elettronici	BILIN [Galaxy Semi-Conductor Holdings Limited]

Homepage	http://www.galaxycn.com

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Production specification

Dual Hot-Carrier Diodes

MMBD452

C139

www.gmicroelec.com

Rev.A

1

FEATURES

Very low capacitance.

Extremely low minority carrier lifetime.

Low reverse leakage.

Power dissipation Pd=225mW.

APPLICATIONS

Designed primarily for UHF and VHF detector

SOT-23

applications.

ORDERING INFORMATION

Type No.

Marking

Package Code

MMBD452

5N

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

Unit

Continuous reverse voltage

VR

30

V

Power Dissipation

Pd

225

mW

Operating junction temperature range

TJ

-55 to +125

℃

Junction and storage temperature

TSTG

-55 to +150

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Reverse Breakdown Voltage

V(BR)

30

V

IR=10μA

Forward voltage

VF

0.38

0.52

0.45

0.6

V

IF=1.0mA

IF=10mA

Reverse current

IR

13

200

nA

VR=25V

Total Capacitanc

CT

0.9

1.5

pF

VR=15V,f=1MHz

Pb

Lead-free

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