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SD107WS Scheda tecnica(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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SD107WS Scheda tecnica(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Schottky Barrier Switching Diode SD107WS B027 www.gmicroelec.com Rev.A 1 FEATURES Low forward voltage drop Guard ring die construction for transient protection Ideal for low logic level applications Low capacitance APPLICATIONS SOD-323 Schottky barrier switching ORDERING INFORMATION Type No. Marking Package Code SD107WS SG SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak Repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR 30 V RMS Reverse Voltage VR(RMS) 21 V Forward continuous Current IF 100 mA Non-Repetitive Peak Forward Surge Current @t ≤10ms IFSM 750 mA Power dissipation Pd 250 mW Thermal resistance junction to ambient air RθJA 500 ℃ /W Junction temperature Tj 150 ℃ Storage temperature TSTG -65 to+150 ℃ Pb Lead-free |
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