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MMBD914-G Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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MMBD914-G Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 3 page MMBD914-G www.vishay.com Vishay Semiconductors Rev. 1.0, 15-May-13 1 Document Number: 85418 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Switching Diode MECHANICAL DATA Case: SOT-23 Weight: approx. 8.1 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diode • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 12 3 PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS MMBD914-G MMBD914-G3-08 or MMBD914-G3-18 Single diode 5DG Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Peak reverse voltage VRM 100 V Maximum average forward rectified current IF(AV) 200 mA Maximum power dissipation Tamb = 25 °C Ptot 225 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Maximum junction temperature Tj 150 °C Storage temperature range Tstg - 55 to + 150 °C Operating temperature range Top - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage drop IF = 10 mA VF 1V Reverse current VR = 20 V IR 25 nA VR = 75 V IR 5μA Reverse recovery time IF = 10 mA to iR = 1 mA, VR = 6 V, RL = 100 trr 4ns Diode capacitance VR = 0 V, f = 1 MHz CD 4pF |
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