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MMBD914LT3G Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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MMBD914LT3G Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 8 1 Publication Order Number: MMBD914LT1/D MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G High-Speed Switching Diode Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping† ORDERING INFORMATION SOT−23 CASE 318 STYLE 8 MARKING DIAGRAM 1 ANODE 3 CATHODE MMBD914LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MMBD914LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel 1 5D M G G 5D = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. SMMBD914LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBD914LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel www.onsemi.com |
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