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SI4276DY-T1-E3 Scheda tecnica(PDF) 5 Page - Vishay Siliconix |
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SI4276DY-T1-E3 Scheda tecnica(HTML) 5 Page - Vishay Siliconix |
5 / 14 page Vishay Siliconix Si4276DY-T1-E3 Document Number: 67909 S11-0653-Rev. A, 11-Apr-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.010 0.015 0.020 0.025 0.030 0 2468 10 TJ = 25 °C ID =9.5 A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0.001 0 1 100 40 60 10 0.1 Time (s) 20 80 0.01 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 1s 10 s Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms DC 100 ms VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified |
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