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BCP69T1G Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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BCP69T1G Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 11 1 Publication Order Number: BCP69T1/D BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: IC = −1.0 A • The SOT−223 Package Can Be Soldered Using Wave or Reflow. • SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. • NPN Complement is BCP68 • AEC−Q101 Qualified and PPAP Capable • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO −20 Vdc Collector−Base Voltage VCBO −25 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC −1.0 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Temperature Range TJ, Tstg −65 to 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance − Junction−to−Ambient (Surface Mounted) RqJA 83.3 °C/W Lead Temperature for Soldering, 0.0625 in from case Time in Solder Bath TL 260 10 °C s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT 1 2 3 4 COLLECTOR 2,4 BASE 1 EMITTER 3 http://onsemi.com SOT−223 (TO−261) CASE 318E STYLE 1 AYW CEG G Device Package Shipping† ORDERING INFORMATION BCP69T1G SOT−223 (Pb−Free) 1000 / Tape & Reel CE = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAM (*Note: Microdot may be in either location) NSVBCP69T1G SOT−223 (Pb−Free) 1000 / Tape & Reel |
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