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SI4590DY Scheda tecnica(PDF) 5 Page - Vishay Siliconix

Il numero della parte SI4590DY
Spiegazioni elettronici  N-and P-Channel 100 V (D-S) MOSFET
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4590DY Scheda tecnica(HTML) 5 Page - Vishay Siliconix

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Si4590DY
www.vishay.com
Vishay Siliconix
S14-0146-Rev. A, 27-Jan-14
5
Document Number: 62937
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD - Source-to-Drain Voltage (V)
T
J = 150 °C
T
J = 25 °C
1.3
1.5
1.7
1.9
2.1
2.3
2.5
- 50
- 25
0
25
50
75
100
125
150
T
J - Temperature (°C)
I
D = 250 μA
0
0.03
0.06
0.09
0.12
0.15
0
2
4
6
8
10
V
GS - Gate-to-Source Voltage (V)
T
J = 125 °C
T
J = 25 °C
I
D = 2 A
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
100
1000
Time (s)
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
10 s
I
D(on) Limited
I
DM Limited
100 ms
Limited by R
DS(on)*
1 ms
T
A = 25 °C
BVDSS Limited
10 ms
100 μs
1 s
DC


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