Si1013CX

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Vishay Siliconix

S14-1601-Rev. B, 11-Aug-14

5

Document Number: 67995

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Safe Operating Area, Junction-to-Ambient

Power Derating, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

0.01

0.1

1

10

0.1

1

10

100

V

DS

-Drain-to-Source Voltage (V)

* V

100 ms

Limited by R

1 ms

T

Single Pulse

10 ms

100 μs

1 s

10 s, DC

BVDSS Limited

0

0.05

0.10

0.15

0.20

0.25

0

255075

100

125

150

T

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

Square Wave Pulse Duration (s)

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse