5-1

Semiconductor

Features

• 6.2A and 5.4A, 600V

• Repetitive Avalanche Energy Rated

• Simple Drive Requirements

• Ease of Paralleling

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly developmental type TA17426.

Symbol

Packaging

JEDEC TO-220AB

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFBC40

TO-220AB

IRFBC40

IRFBC42

TO-220AB

IRFBC42

NOTE: When ordering, include the entire part number.

G

D

S

DRAIN (FLANGE)

GATE

SOURCE

DRAIN

January 1998

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright

File Number

2157.2

IRFBC40,

IRFBC42

6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,

N-Channel Power MOSFETs