MMBD701LT3G datasheet(2/5 Pages) ONSEMI

Il numero della parte	MMBD701LT3G

Spiegazioni elettronici	Silicon Hot-Carrier Diodes

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Produttore elettronici	ONSEMI [ON Semiconductor]

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MBD701, MMBD701L, SMMBD701L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mAdc)

V(BR)R

70

−

V

Total Capacitance

(VR = 20 V, f = 1.0 MHz) Figure 1

CT

−

0.5

1.0

pF

Reverse Leakage

(VR = 35 V) Figure 3

IR

−

9.0

200

nAdc

Forward Voltage

(IF = 1.0 mAdc) Figure 4

VF

−

0.42

0.5

Vdc

Forward Voltage

(IF = 10 mAdc) Figure 4

VF

−

0.7

1.0

Vdc

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION

Device

Package

Shipping†

MBD701G

TO−92

(Pb−Free)

1,000 Units / Bulk

MMBD701LT1G

SOT−23

(Pb−Free)

3,000 / Tape & Reel

SMMBD701LT1G

SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBD701LT3G

SOT−23

(Pb−Free)

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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