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FMG4A Scheda tecnica(PDF) 2 Page - Rohm

Il numero della parte FMG4A
Spiegazioni elettronici  Emitter common(dual digital transistor)
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Produttore elettronici  ROHM [Rohm]
Homepage  http://www.rohm.com
Logo ROHM - Rohm

FMG4A Scheda tecnica(HTML) 2 Page - Rohm

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EMG4 / UMG4N / FMG4A
Datasheet
l
lAbsolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Power dissipation
EMG4
PD*1*2
150
mW/Total
UMG4N
PD*1*2
150
FMG4A
PD*1*3
300
Junction temperature
Tj
150
℃
Range of storage temperature
Tstg
-55 to +150
℃
l
lElectrical characteristics (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Collector-base breakdown
voltage
BVCBO
IC = 50μA
50
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = 1mA
50
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = 50μA
5
-
-
V
Collector cut-off current
ICBO
VCB = 50V
-
-
500
nA
Emitter cut-off current
IEBO
VEB = 4V
-
-
500
nA
Collector-emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 1mA
-
-
300
mV
DC current gain
hFE
VCE = 5V, IC = 1mA
100
250
600
-
Input resistance
R1
-
7
10
13
kΩ
Transition frequency
fT*4
VCE = 10V, IE = -5mA,
f = 100MHz
-
250
-
MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
*4 Characteristics of built-in transistor.
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
　　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
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2/6
20151019 - Rev.002


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