© Semiconductor Components Industries, LLC, 2014

January, 2014 − Rev. 3

1

Publication Order Number:

BC846BM3/D

BC846BM3T5G,

NSVBC846BM3T5G

General Purpose Transistor

NPN Silicon

Human Body Model: >4000 V

Machine Model: >400 V

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

65

Vdc

Collector−Base Voltage

80

Vdc

Emitter−Base Voltage

6.0

Vdc

Collector Current − Continuous

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

(Note 1)

Derate above 25°C

265

2.1

mW

mW/°C

Thermal Resistance,

Junction to Ambient (Note 1)

470

°C/W

Total Device Dissipation

Alumina Substrate (Note 2)

Derate above 25°C

640

5.1

mW

mW/°C

Thermal Resistance,

Junction to Ambient (Note 2)

195

°C/W

Junction and Storage

Temperature Range

−55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

Device

Package

ORDERING INFORMATION

SOT−723

CASE 631AA

STYLE 1

MARKING

DIAGRAM

COLLECTOR

3

1

BASE

2

EMITTER

BC846BM3T5G

SOT−723

(Pb−Free)

8000 / Tape &

Reel

http://onsemi.com

1B = Specific Device Code

M = Date Code

1B M

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

3

2

1

NSVBC846BM3T5G SOT−723

(Pb−Free)

8000 / Tape &

Reel