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BD241CG Scheda tecnica(PDF) 3 Page - ON Semiconductor |
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BD241CG Scheda tecnica(HTML) 3 Page - ON Semiconductor |
3 / 6 page BD241C (NPN), BD242B (PNP), BD242C (PNP) www.onsemi.com 3 2.0 0.03 IC, COLLECTOR CURRENT (AMP) 1.0 0.7 0.5 0.3 0.1 0.07 0.02 0.05 0.1 0.3 0.5 0.7 1.0 3.0 td @ VBE(off) = 2.0 V IC/IB = 10 TJ = 25°C tr @ VCC = 30 V tr @ VCC = 10 V 0.07 0.03 0.05 Figure 2. Switching Time Equivalent Circuit Figure 3. Turn−On Time APPROX + 11 V TURN‐ON PULSE Vin 0 t1 VEB(off) APPROX - 9.0 V TURN‐OFF PULSE Vin t3 t2 APPROX + 11 V VCC SCOPE RK Cjd % Ceb - 4.0 V t1 v 7.0 ns 100 t t2 t 500 ms t3 t 15 ns DUTY CYCLE [ 2.0% Vin RL Figure 4. Thermal Response t, TIME (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k 500 ZqJC (t) = r(t) RqJC RqJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D = 0.5 0.2 0.05 0.02 0.01 SINGLE PULSE 0.1 SECOND BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMITATION @ TC = 25°C BONDING WIRE LIMITED CURVES APPLY BELOW RATED VCEO 10 5.0 Figure 5. Active Region Safe Operating Area IC, COLLECTOR CURRENT (AMP) 5.0 1.0 0.1 10 20 50 100 BD241C, BD242C 5.0 ms 100 ms 1.0 ms 0.2 2.0 0.5 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150 °C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. |
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Descrizione simile - BD241CG |
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