2SB1216, 2SD1816

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2

ELECTRICAL CHARACTERISTICS

at Ta

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=(−)100V, IE=0A

(

−)1

μA

Emitter Cutoff Current

IEBO

VEB=(−)4V, IC=0A

(

−)1

μA

DC Current Gain

hFE1

VCE=(−)5V, IC=(−)0.5A

140*

400*

hFE2

VCE=(−)5V,IC=(−)3A

40

Gain-Bandwidth Product

fT

VCE=(−)10V, IC=(−)0.5A

(130) 180

MHz

Output Capacitance

Cob

VCB=(−)10V, f=1MHz

(65) 40

pF

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=(−)2A, IB=(−)0.2A

(

−200)150

(

−500)400

mV

Base to Emitter Saturation Voltage

VBE(sat)

IC=(−)2A, IB=(−)0.2A

(

−) 0.9

(

−) 1.2

V

Collector to Base Breakdown

Voltage

V(BR)CBO

IC=(−)10μA, IE=0A

(

−)120

V

Collector to Emitter Breakdown

Voltage

V(BR)CEO

IC=(−)1mA, RBE=∞

(

−)100

V

Emitter to Base Breakdown Voltage

V(BR)EBO

IE=(−)10μA, IC=0A

(

−) 6

V

Turn-On Time

ton

See specified Test

Circuit

100

ns

Storage Time

tstg

(800) 900

ns

Fall Time

tf

50

ns

Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Rank

S

T

hFE

140 to 280

200 to 400

Fig.1 Switching Time Test Circuit