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BTA204W-500E Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BTA204W-500E Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 8 page December 1998 2 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA204W series D, E and F GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope suitable for surface mounting, intended for use in BTA204W- 500D 600D - motor control circuits or with other BTA204W- 500E 600E 800E highly inductive loads. These devices BTA204W- 500F 600F 800F balance the requirements of V DRM Repetitive peak 500 600 800 V commutation performance and gate off-state voltages sensitivity. The "sensitive gate" E I T(RMS) RMS on-state current 1 1 1 A series and "logic level" D series are I TSM Non-repetitive peak on-state 10 10 10 A intended for interfacing with low power current drivers, including micro controllers. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate tab main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 V DRM Repetitive peak off-state - 500 1 600 1 800 V voltages I T(RMS) RMS on-state current full sine wave; - 1 A T sp ≤ 108 ˚C I TSM Non-repetitive peak full sine wave; on-state current T j = 25 ˚C prior to surge t = 20 ms - 10 A t = 16.7 ms - 11 A I 2tI2t for fusing t = 10 ms - 0.5 A 2s dI T/dt Repetitive rate of rise of I TM = 1.5 A; 100 A/ µs on-state current after I G = 0.2 A; triggering dI G/dt = 0.2 A/µs I GM Peak gate current - 2 A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any 20 ms - 0.5 W period T stg Storage temperature -40 150 ˚C T j Operating junction - 125 ˚C temperature T1 T2 G 4 1 23 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/ µs. |
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