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BTA204W-500D Scheda tecnica(PDF) 3 Page - NXP Semiconductors

Il numero della parte BTA204W-500D
Spiegazioni elettronici  BTA204W series D, E and F Three quadrant triacs guaranteed commutation
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BTA204W-500D Scheda tecnica(HTML) 3 Page - NXP Semiconductors

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December 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204W series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance
full or half cycle
-
-
15
K/W
junction to solder point
R
th j-a
Thermal resistance
pcb mounted; minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted; pad area as in fig:2
-
70
-
K/W
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204W-
...D
...E
...F
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
-
-
5
10
25
mA
T2+ G-
-
-
5
10
25
mA
T2- G-
-
-
5
10
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
-
6
12
20
mA
T2+ G-
-
-
9
18
30
mA
T2- G-
-
-
6
12
20
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
-
6
12
20
mA
V
T
On-state voltage
I
T = 2 A
-
1.2
1.5
V
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 ˚C
I
D
Off-state leakage current
V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 ˚C
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA204W-
...D
...E
...F
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max);20
30
50
-
-
V/
µs
off-state voltage
T
j = 125 ˚C; exponential
waveform; gate open
circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 ˚C;
1.0
2.0
2.5
-
-
A/ms
commutating current
I
T(RMS) = 1 A;
dV
com/dt = 20V/µs; gate
open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 ˚C;
5.0
-
-
-
-
A/ms
commutating current
I
T(RMS) = 1 A;
dV
com/dt = 0.1V/µs; gate
open circuit
t
gt
Gate controlled turn-on
I
TM = 12 A; VD = VDRM(max);-
-
-
2
-
µs
time
I
G = 0.1 A; dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.


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