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BTA204W-500D Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BTA204W-500D Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 8 page December 1998 3 Rev 1.000 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA204W series D, E and F THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-sp Thermal resistance full or half cycle - - 15 K/W junction to solder point R th j-a Thermal resistance pcb mounted; minimum footprint - 156 - K/W junction to ambient pcb mounted; pad area as in fig:2 - 70 - K/W STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTA204W- ...D ...E ...F I GT Gate trigger current 2 V D = 12 V; IT = 0.1 A T2+ G+ - - 5 10 25 mA T2+ G- - - 5 10 25 mA T2- G- - - 5 10 25 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - - 6 12 20 mA T2+ G- - - 9 18 30 mA T2- G- - - 6 12 20 mA I H Holding current V D = 12 V; IGT = 0.1 A - - 6 12 20 mA V T On-state voltage I T = 2 A - 1.2 1.5 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V V D = 400 V; IT = 0.1 A; 0.25 0.4 - V T j = 125 ˚C I D Off-state leakage current V D = VDRM(max); - 0.1 0.5 mA T j = 125 ˚C DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTA204W- ...D ...E ...F dV D/dt Critical rate of rise of V DM = 67% VDRM(max);20 30 50 - - V/ µs off-state voltage T j = 125 ˚C; exponential waveform; gate open circuit dI com/dt Critical rate of change of V DM = 400 V; Tj = 125 ˚C; 1.0 2.0 2.5 - - A/ms commutating current I T(RMS) = 1 A; dV com/dt = 20V/µs; gate open circuit dI com/dt Critical rate of change of V DM = 400 V; Tj = 125 ˚C; 5.0 - - - - A/ms commutating current I T(RMS) = 1 A; dV com/dt = 0.1V/µs; gate open circuit t gt Gate controlled turn-on I TM = 12 A; VD = VDRM(max);- - - 2 - µs time I G = 0.1 A; dIG/dt = 5 A/µs 2 Device does not trigger in the T2-, G+ quadrant. |
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