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BTA204M-800C Scheda tecnica(PDF) 1 Page - NXP Semiconductors |
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BTA204M-800C Scheda tecnica(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Three quadrant triacs BTA204S series B and C high commutation BTA204M series B and C GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated high commutation triacs in SYMBOL PARAMETER MAX. MAX. MAX. UNIT a plastic envelope suitable for surface mounting intended for use in circuits BTA204S (or BTA204M)- 500B 600B 800B where high static and dynamic dV/dt BTA204S (or BTA204M)- 500C 600C 800C and high dI/dt can occur. These V DRM Repetitive peak 500 600 800 V devices will commutate the full rated off-state voltages rms current at the maximum rated I T(RMS) RMS on-state current 4 4 4 A junction temperature without the aid of I TSM Non-repetitive peak on-state 25 25 25 A a snubber. current PINNING - SOT428 PIN CONFIGURATION SYMBOL PIN Standard Alternative NUMBER S M 1 MT1 gate 2 MT2 MT2 3 gate MT1 tab MT2 MT2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 V DRM Repetitive peak off-state - 500 1 600 1 800 V voltages I T(RMS) RMS on-state current full sine wave; - 4 A T mb ≤ 107 ˚C I TSM Non-repetitive peak full sine wave; on-state current T j = 25 ˚C prior to surge t = 20 ms - 25 A t = 16.7 ms - 27 A I 2tI2t for fusing t = 10 ms - 3.1 A 2s dI T/dt Repetitive rate of rise of I TM = 6 A; IG = 0.2 A; 100 A/ µs on-state current after dI G/dt = 0.2 A/µs triggering I GM Peak gate current - 2 A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any 20 ms - 0.5 W period T stg Storage temperature -40 150 ˚C T j Operating junction - 125 ˚C temperature 1 2 3 tab T1 T2 G 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/ µs. December 1998 1 Rev 1.000 |
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