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BCW66GLT1G Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte BCW66GLT1G
Spiegazioni elettronici  General Purpose Transistor
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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BCW66GLT1G Scheda tecnica(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
45
Vdc
Collector − Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0)
V(BR)CES
75
Vdc
Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCE = 45 Vdc, IE = 0)
(VCE = 45 Vdc, IE = 0, TA = 150°C)
ICES
20
20
nAdc
mAdc
Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0)
IEBO
20
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
50
110
160
60
400
Collector − Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.7
0.3
Vdc
Base − Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
2.0
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current − Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
12
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
80
pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
10
dB
SWITCHING CHARACTERISTICS
Turn−On Time (IB1 = IB2 = 15 mAdc)
ton
100
ns
Turn−Off Time (IC = 150 mAdc, RL = 150 W)
toff
400
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1000
100
10
1
0.1
0.01
0.1
1
1000
100
10
1
0.1
0.2
0.3
0.5
0.6
0.8
0.9
1.1
1.2
IC/IB = 10
TA = −55°C
TA = 25°C
TA = 150°C
0.4
0.7
1.0
IC/IB = 10
TA = −55°C
TA = 25°C
TA = 150°C


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