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2SCR533P5 Scheda tecnica(PDF) 2 Page - Rohm

Il numero della parte 2SCR533P5
Spiegazioni elettronici  Middle Power Transistors (50V / 3A)
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Produttore elettronici  ROHM [Rohm]
Homepage  http://www.rohm.com
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2SCR533P5 Scheda tecnica(HTML) 2 Page - Rohm

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2SCR533P5
 
   
   
   
  
   
               
Datasheet
l
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
ICP*1
6
A
Power dissipation
PD*2
0.5
W
PD*3
2.0
W
Junction temperature
Tj
150
Range of storage temperature
Tstg
-55 to +150
l
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Collector-base breakdown
voltage
BVCBO
IC = 100μA
50
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = 1mA
50
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = 100μA
6
-
-
V
Collector cut-off current
ICBO
VCB = 50V
-
-
1.0
μA
Emitter cut-off current
IEBO
VEB = 4V
-
-
1.0
μA
Collector-emitter saturation voltage
VCE(sat) IC = 1A, IB = 50mA
-
130
350
mV
DC current gain
hFE
VCE = 3V, IC = 50mA
180
-
450
-
Transition frequency
fT
*4
VCE = 10V, IE = -500mA,
f = 100MHz
-
320
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
-
13
-
pF
Turn-On time
ton
IC = 1.5A,
IB1 = 150mA,
IB2 = -150mA,
VCC 10V,
RL = 6.8Ω
See test circuit
-
50
-
ns
Storage time
tstg
-
450
-
ns
Fall time
tf
-
80
-
ns
                                        
                              
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board.(40×40×0.7mm)
*4 Pulsed
                                            
 
                                        
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2/6
20150730 - Rev.001


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