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MTB012N04J3-0-T3-G Scheda tecnica(PDF) 5 Page - Cystech Electonics Corp. |
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MTB012N04J3-0-T3-G Scheda tecnica(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C450J3 Issued Date : 2016.11.11 Revised Date : Page No. : 5/9 MTB012N04J3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) C oss Ciss Crss NormalizedThreshold Voltage vs Junction Tempearture 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 02468 10 12 14 16 Total Gate Charge---Qg(nC) ID=20A VDS=20V VDS=15V Maximum Safe Operating Area 0.1 1 10 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100 μs 1s RDS(ON) Limited TC=25°C, Tj=150°, VGS=10V RθJC=3°C/W, Single Pulse Maximum Drain Current vs Case Temperature 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) VGS=10V, RθJC=3°C/W |
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