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IRLI3705N Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRLI3705N Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 8 page IRLI3705N HEXFET® Power MOSFET PD - 9.1369B S D G VDSS = 55V RDS(on) = 0.01Ω ID = 52A l Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated TO-220 FULLPAK Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. 8/25/97 Description Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.6 RθJA Junction-to-Ambient ––– 65 Thermal Resistance Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 52 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A IDM Pulsed Drain Current 310 PD @TC = 25°C Power Dissipation 58 W Linear Derating Factor 0.39 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 340 mJ IAR Avalanche Current 46 A EAR Repetitive Avalanche Energy 5.8 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings °C/W |
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