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2SD1499-220F Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1499-220F Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1499 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 5V 1.8 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 50 μ A IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 μ A hFE-1 DC Current Gain IC= 20mA ; VCE= 5V 20 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 60 200 hFE-3 DC Current Gain IC= 3A ; VCE= 5V 20 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V; ftest= 1.0MHz 20 MHz COB Output Capacitance IE=0 ; VCB= 10V;ftest= 1.0MHz 90 pF hFE-2 classifications Q P 60-120 100-200 |
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