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2SD1499-220F Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte 2SD1499-220F
Spiegazioni elettronici  isc Silicon NPN Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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2SD1499-220F Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SD1499
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; IB= 0
100
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 3A ; VCE= 5V
1.8
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
50
μ
A
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
50
μ
A
hFE-1
DC Current Gain
IC= 20mA ; VCE= 5V
20
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
60
200
hFE-3
DC Current Gain
IC= 3A ; VCE= 5V
20
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V; ftest= 1.0MHz
20
MHz
COB
Output Capacitance
IE=0 ; VCB= 10V;ftest= 1.0MHz
90
pF
hFE-2 classifications
Q
P
60-120
100-200


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