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2SD1446 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1446 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1446 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.06A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.06A 2.5 V ICBO Collector Cutoff Current VCB= 350V; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA hFE DC Current Gain IC= 2A ; VCE= 2V 500 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 15 MHz |
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