Motore di ricerca datesheet componenti elettronici |
|
FDD6670S Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor |
|
FDD6670S Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page FDD6670S Rev E (W) Typical Characteristics 0 10 20 30 40 50 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 4.5V 4.0V 3.5V VGS = 10V 6.0V 3.0V 0.6 1 1.4 1.8 2.2 2.6 0 10 20 30 40 50 ID, DRAIN CURRENT (A) VGS = 3.5V 6.0V 10V 4.0V 4.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE ( o C) ID = 13.5A VGS = 10V 0.005 0.01 0.015 0.02 0.025 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 6.8A TA = 125 o C TA = 25 o C Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 50 60 70 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 o C 25 o C 125 o C VDS = 5V 0.001 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 o C 25 o C -55 o C VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Codice articolo simile - FDD6670S |
|
Descrizione simile - FDD6670S |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |