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74HCT2G00DP Scheda tecnica(PDF) 5 Page - NXP Semiconductors

Il numero della parte 74HCT2G00DP
Spiegazioni elettronici  Dual 2-input NAND gate
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74HCT2G00DP Scheda tecnica(HTML) 5 Page - NXP Semiconductors

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2003 Feb 12
5
Philips Semiconductors
Product specification
Dual 2-input NAND gate
74HC2G00; 74HCT2G00
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110
°C the value of P
D derates linearly with 8 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC2G00
74HCT2G00
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
VI
input voltage
0
VCC
0
VCC
V
VO
output voltage
0
VCC
0
VCC
V
Tamb
operating ambient
temperature
see DC and AC
characteristics per
device
−40
+25
+125
−40
+25
+125
°C
tr,tf
input rise and fall times
VCC = 2.0 V
−−
1000
−−−
ns
VCC = 4.5 V
6.0
500
6.0
500
ns
VCC = 6.0 V
−−
400
−−−
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+7.0
V
IIK
input diode current
VI < −0.5 V or VI >VCC + 0.5 V; note 1
−±20
mA
IOK
output diode current
VO < −0.5 V or VO >VCC + 0.5 V; note 1
−±20
mA
IO
output source or sink current
−0.5V<VO <VCC + 0.5 V; note 1
25
mA
ICC
VCC or GND current
note 1
50
mA
Tstg
storage temperature
−65
+150
°C
PD
power dissipation per package
for temperature range from
−40 to +125 °C;
note 2
300
mW


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