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2SD1289 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte 2SD1289
Spiegazioni elettronici  isc Silicon NPN Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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2SD1289 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SD1289
DESCRIPTION
·
Low Collector Saturation Voltage
: VCE(sat)= 0.65V(Typ)@IC= 5.0A
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·
Complement to Type 2SB966
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Audio frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
8
A
ICP
Collector Current-Pulse
12
A
PC
Collector Power Dissipation
@ TC=25℃
80
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150


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