Motore di ricerca datesheet componenti elettronici |
|
2SD1289 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
2SD1289 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD1289 DESCRIPTION · Low Collector Saturation Voltage : VCE(sat)= 0.65V(Typ)@IC= 5.0A · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) · Complement to Type 2SB966 · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse 12 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Codice articolo simile - 2SD1289 |
|
Descrizione simile - 2SD1289 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |