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2SD1143 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1143 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD1143 DESCRIPTION · High Breakdown Voltage- : VCBO= 1500V (Min) · Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5A · Built-in Damper Diode · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current- Peak 8 A PC Collector Power Dissipation @ TC= 25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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