STGB40H65FB datasheet(4/17 Pages) STMICROELECTRONICS

Il numero della parte	STGB40H65FB

Spiegazioni elettronici	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGB40H65FB

4/17

DocID029491 Rev 1

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

650

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

1.6

2

V

VGE = 15 V, IC = 40 A,

TJ = 125 °C

1.7

VGE = 15 V, IC = 40 A,

TJ = 175 °C

1.8

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5

6

7

V

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

25

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

nA

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz,

VGE = 0 V

-

5412

-

pF

Coes

Output capacitance

-

198

-

Cres

Reverse transfer capacitance

-

107

-

Qg

Total gate charge

VCC = 520 V, IC = 40 A,

VGE = 15 V (see Figure 23:

"Gate charge test circuit")

-

210

-

nC

Qge

Gate-emitter charge

-

39

-

Qgc

Gate-collector charge

-

82

-

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