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IRF7480MPBF Scheda tecnica(PDF) 3 Page - Infineon Technologies AG

Il numero della parte IRF7480MPBF
Spiegazioni elettronici  DirectFET짰 N-Channel Power MOSFET
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IRF7480MPBF Scheda tecnica(HTML) 3 Page - Infineon Technologies AG

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IRF7480MTRPbF
3
2016-5-4
 
D
S
G
Dynamic @ TJ = 25°C (unless otherwise specified)
   
 
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
370
–––
–––
S
VDS = 10V, ID = 132A
Qg
Total Gate Charge
–––
123
185
nC
ID = 132A
Qgs
Gate-to-Source Charge
–––
31
–––
VDS =20V
Qgd
Gate-to-Drain ("Miller") Charge
–––
44
–––
VGS = 10V 
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
79
–––
ID = 132A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
–––
21
–––
ns
VDD = 20V
tr
Rise Time
–––
70
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
68
–––
RG = 2.7
tf
Fall Time
–––
58
–––
VGS = 10V 
Ciss
Input Capacitance
––– 6680 –––
pF
VGS = 0V
Coss
Output Capacitance
––– 1035 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
700
–––
ƒ = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1240 –––
VGS = 0V, VDS = 0V to 32V 
Coss eff. (TR) Effective Output Capacitance (Time Related)
––– 1515 –––
VGS = 0V, VDS = 0V to 32V 
Diode Characteristics
   
 
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
87
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
868
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ= 25°C,IS =132A, VGS = 0V
dv/dt
Peak Diode Recovery 
–––
2.4
––– V/ns
TJ =150°C,IS =132A,
VDS = 40V
trr
Reverse Recovery Time
–––
44
–––
ns
TJ = 25° C VR = 34V,
–––
46
–––
TJ = 125°C IF = 132A
Qrr
Reverse Recovery Charge
–––
56
–––
TJ = 25°C
di/dt = 100A/µs 
–––
63
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.1
–––
A
TJ = 25°C
nC
Notes:

Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.009mH, RG = 50, IAS = 132A, VGS =10V.
ISD ≤ 132A, di/dt ≤ 920A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note # AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V.


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