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SI4942DY Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI4942DY Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si4942DY Vishay Siliconix Document Number: 71887 S-03950—Rev. B, 16-May-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 320 640 960 1280 1600 0 8 16 24 32 40 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 5 10 15 20 25 0.000 0.010 0.020 0.030 0.040 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 20 V ID = 5.7 A ID - Drain Current (A) VGS = 10 V ID = 7.4 A VGS = 10 V VGS = 4.5 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 TJ = 150_C 30 10 0.1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) ID = 7.4 A 1 TJ = 25_C |
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