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SI4941EDY Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI4941EDY Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 74248 S-72693-Rev. B, 24-Dec-07 Vishay Siliconix Si4941EDY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Gate-Source Voltage Single Pulse Power 0.00 0.02 0.04 0.06 0.08 0.10 0.12 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) ID = 8.3 A 25 °C 125 °C 0 30 50 10 20 Time (s) 40 1 100 600 10 10-1 10-2 Threshold Variance Safe Operating Area - 2.4 - 2.2 - 2 - 1.8 - 1.6 - 1.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) * VGS minimum VGS at which rDS(on) is specified 100 0.01 10 0.1 VDS - Drain-to-Source Voltage (V) 1 0.1 1 10 100 Limited by rDS(on)* T = 25 °C Single Pulse BVDSS Limited P(t) = 1 s P(t) = 10 s DC P(t) = 10 ms P(t) = 100 ms P(t) = 1 ms A |
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