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BTB12-600SW Scheda tecnica(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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BTB12-600SW Scheda tecnica(HTML) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
2 / 3 page ELECTRICAL CHARACTERISTICS (@Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Repetitive peak off-state voltage VDRM (3) ID=10µA 600 V Repetitive peak Off-state current IDRM VD=VDRM 5 μA Gate trigger current IGT (1) (3) VD=12V,RL=30Ω 50 mA Gate trigger voltage VGT VD=12V,RL=30Ω 1.3 V Ⅰ -Ⅲ 70 mA Latching current IL (3) Ⅱ IG=1.2 IGT 80 mA Holding current IH (2) (3) IT=100mA 50 mA Peak on-state voltage VTM (2) IT=17A 1.55 V Critical rate of rise of off-state voltage dV/dt *(2) VD=67%VDRM,gate open 20 V/μs *Guaranteed by design, not subject to production testing. 1.Minimum IGT is guaranteed at 5% of IGT max. 2.for both polarities of A2 referenced to A1. 3. CLASSIFICATION of BTB12 -600 RANK VDRM >600 IGT Ⅰ ,Ⅱ,Ⅱ <10 <35 <50 IH <15 <35 <50 Ⅰ , Ⅲ <25 <50 <70 IL Ⅱ <30 <60 <80 mA www.cj-elec.com 2 BTB12-600SW BTB12-600CW BTB12-600BW >600 >600 A-1,Jun,2016 V Unit |
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