The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide

infrared emitting diode optically coupled to a monolithic silicon phototransistor

detector.

•

Most Economical Optoisolator Choice for Medium Speed, Switching Applications

•

Meets or Exceeds All JEDEC Registered Specifications

Applications

•

General Purpose Switching Circuits

•

Interfacing and coupling systems of different potentials and impedances

•

I/O Interfacing

•

Solid State Relays

Rating

Symbol

Value

Unit

INPUT LED

Reverse Voltage

VR

3

Volts

Forward Current — Continuous

IF

60

mA

LED Power Dissipation @ TA = 25°C

with Negligible Power in Output Detector

Derate above 25°C

PD

120

1.41

mW

mW/°C

OUTPUT TRANSISTOR

Collector–Emitter Voltage

VCEO

30

Volts

Emitter–Collector Voltage

VECO

7

Volts

Collector–Base Voltage

VCBO

70

Volts

Collector Current — Continuous

IC

150

mA

Detector Power Dissipation @ TA = 25°C

with Negligible Power in Input LED

Derate above 25°C

PD

150

1.76

mW

mW/°C

TOTAL DEVICE

Isolation Surge Voltage(1)

(Peak ac Voltage, 60 Hz, 1 sec Duration)

VISO

7500

Vac(pk)

Total Device Power Dissipation @ TA = 25°C

Derate above 25°C

PD

250

2.94

mW

mW/°C

Ambient Operating Temperature Range

TA

–55 to +100

°

C

Storage Temperature Range

Tstg

–55 to +150

°

C

Soldering Temperature (10 sec, 1/16ʺ from case)

TL

260

°

C

Order this document

by 4N25/D

SCHEMATIC

PIN 1. LED ANODE

2. LED CATHODE

3. N.C.

4. EMITTER

5. COLLECTOR

6. BASE

1

2

3

6

5

4

STANDARD THRU HOLE

6 1

1. Isolation surge voltage is an internal device dielectric breakdown rating.

4N25

4N26

4N27

4N28