Motore di ricerca datesheet componenti elettronici |
|
SI4500DY Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
|
SI4500DY Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 7 page Si4500DY Vishay Siliconix New Product www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70880 S-00269—Rev. A, 26-Apr-99 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N-CHANNEL 0.001 0 1 80 20 10 0.01 Single Pulse Power, Juncion-To-Ambient Time (sec) 60 40 0.1 –0.6 –0.4 –0.2 –0.0 0.2 0.4 –50 –25 0 25 50 75 100 125 150 0 0.02 0.04 0.06 0.08 0.10 02468 10 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) TJ – Temperature (_C) TJ = 150_C TJ = 25_C ID = 4.5 A ID = 250 mA 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10–3 10–2 1 10 600 10–1 10–4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 73_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
Codice articolo simile - SI4500DY |
|
Descrizione simile - SI4500DY |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |