FQP50N06 datasheet(4/6 Pages) THINKISEMI

Il numero della parte	FQP50N06

Spiegazioni elettronici	50A,60V Heatsink Planar N-Channel Power MOSFET

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Produttore elettronici	THINKISEMI [Thinki Semiconductor Co., Ltd.]

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Rev.05

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

※ No t e s :

1 . Z

θ

JC(t ) = 1 . 2 4

℃ /W M a x .

2 . D u t y F a c t o r , D = t

1

/t

2

3 . T

JM - T C = P DM * Z θ

JC(t )

s i n g le p u ls e

D= 0 . 5

0. 0 2

0. 2

0. 0 5

0. 1

0. 0 1

t

1 ,

S quar e W a v e P u l s e D u r a t i on [ s ec ]

25

50

75

100

125

150

175

0

10

20

30

40

50

60

T

C, Case Temperature [

℃]

10

-1

10

0

10

1

10

2

10

0

10

1

10

2

10

3

DC

10 ms

1 ms

100μ s

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

o

C

2. T

J

= 175

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

※ Notes :

1. V

GS = 10 V

2. I

D

= 25 A

T

J, Junction Temperature [

o

C]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※Notes:

1. V

GS = 0 V

2. I

D = 250

μ A

T

J, Junction Temperature [

o

C]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

t

1

PDM

t

2

®

FQP50N06

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