MTB015N10RQ8 datasheet(4/9 Pages) CYSTEKEC

Il numero della parte	MTB015N10RQ8

Spiegazioni elettronici	N-Channel Enhancement Mode Power MOSFET

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Produttore elettronici	CYSTEKEC [Cystech Electonics Corp.]

Homepage	http://www.cystekec.com

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4 / 9 page

CYStech Electronics Corp.

Spec. No. : C053Q8

Issued Date : 2016.11.02

Revised Date :

Page No. : 4/9

MTB015N10RQ8

CYStek Product Specification

Typical Characteristics

Typical Output Characteristics

0

4

8

12

16

20

24

28

32

02

4

68

10

VDS, Drain-Source Voltage(V)

10V,9V,8V,7V,6V,5V,4.5V,4V,3.5V,3V

2.5V

VGS=2V

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=250μA,

VGS=0V

Static Drain-Source On-State resistance vs Drain Current

10

100

0.1

1

10

100

ID, Drain Current(A)

VGS=4.5V

VGS=10V

Reverse Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1.0

1.2

02

46

8

1

IDR, Reverse Drain Current(A)

0

Tj=25°C

Tj=150°C

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

50

100

150

200

250

300

350

400

450

500

02

46

8

10

Drain-Source On-State Resistance vs Junction Tempearture

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

VGS=10V, ID=10A

RDS(ON)@Tj=25°C : 13.6mΩ typ.

VGS, Gate-Source Voltage(V)

ID=10A

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