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SI4500BDY-E3 Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI4500BDY-E3 Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 8 page FEATURES D TrenchFETr Power MOSFET Si4500BDY Vishay Siliconix Document Number: 72281 S-41428—Rev. B, 26-Jul-04 www.vishay.com 1 Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) N Channel 20 0.020 @ VGS = 4.5 V 9.1 N-Channel 20 0.030 @ VGS = 2.5 V 7.5 P Channel 20 0.060 @ VGS = −4.5 V −5.3 P-Channel −20 0.100 @ VGS = −2.5 V −4.1 S1 D G1 D S2 D G2 D SO-8 5 6 7 8 Top View 2 3 4 1 S2 G2 G1 S1 D Ordering Information: Si4500BDY Si4500BDY-T1 (with Tape and Reel) Si4500BDY—E3 (Lead (Pb)-Free) Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel P-Channel Parameter Symbol 10 sec. Steady State 10 sec. Steady State Unit Drain-Source Voltage VDS 20 −20 V Gate-Source Voltage VGS "12 "12 V Continuous Drain Current (TJ = 150_C)a, b TA = 25_C ID 9.1 6.6 −5.3 −3.8 Continuous Drain Current (TJ = 150_C)a, b TA = 70_C ID 7.3 5.3 −4.9 −3.1 A Pulsed Drain Current IDM 30 −20 A Continuous Source Current (Diode Conduction)a, b IS 2.1 1.1 −2.1 −1.1 Maximum Power Dissipationa, b TA = 25_C PD 2.5 1.3 2.5 1.3 W Maximum Power Dissipationa, b TA = 70_C PD 1.6 0.8 1.6 0.8 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C THERMAL RESISTANCE RATINGS N-Channel P- Channel Parameter Symbol Typ Max Typ Max Unit Mi J ti t A bi ta t v 10 sec R 40 50 41 50 Maximum Junction-to-Ambienta Steady-State RthJA 75 95 75 95 _C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 20 22 23 26 C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec |
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