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MC100EPT23DTR2G Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte MC100EPT23DTR2G
Spiegazioni elettronici  3.3 V Dual Differential LVPECL/LVDS/CML to LVTTL/LVCMOS Translator
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MC100EPT23DTR2G Scheda tecnica(HTML) 2 Page - ON Semiconductor

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MC100EPT23
www.onsemi.com
2
1
2
3
45
6
7
8
Q0
GND
VCC
Figure 1. Logic Diagram and 8-Lead Pinout
D0
Q1
D1
D1
D0
LVPECL
LVTTL
(Top View)
Table 1. PIN DESCRIPTION
Pin
Function
Q0, Q1
LVTTL/LVCMOS Outputs
D0**, D1**
D0**, D1**
Differential LVPECL/LVDS/CML Inputs
VCC
Positive Supply
GND
Ground
EP
(DFN−8 only) Thermal exposed pad must be
connected to a sufficient thermal conduit.
Electrically connect to the most negative
supply (GND) or leave unconnected, floating
open.
** Pins will default to VCC/2 when left open.
Table 2. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
50 kW
Internal Input Pullup Resistor
50 kW
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 1500 V
> 100 V
> 2 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Pb-Free Pkg
SOIC−8NB
TSSOP−8
DFN−8
Level 1
Level 3
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Transistor Count
91 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
Power Supply
GND = 0 V
3.8
V
VI
Input Voltage
GND = 0 V
VI ≤ VCC
3.8
V
Iout
Output Current
Continuous
Surge
50
100
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
SOIC−8NB
190
130
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
SOIC−8NB
41 to 44
°C/W
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
TSSOP−8
185
140
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
TSSOP−8
41 to 44
°C/W
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
DFN−8
129
84
°C/W


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