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2N4347 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N4347 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2N4347 DESCRIPTION · Excellent Safe Operating Area · Low Collector-Emitter Saturation Voltage · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS · Designed for application in industrial and commercial equipment including high fidelity audio amplifier,series and shunt regulators and power switches ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.75 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ |
Codice articolo simile - 2N4347 |
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Descrizione simile - 2N4347 |
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