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MC10EP451 Scheda tecnica(PDF) 6 Page - ON Semiconductor

Il numero della parte MC10EP451
Spiegazioni elettronici  ECL 6-Bit Differential Register
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MC10EP451 Scheda tecnica(HTML) 6 Page - ON Semiconductor

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MC10EP451, MC100EP451
http://onsemi.com
6
Table 9. 100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = −5.5 V to −3.0 V (Note 13)
Symbol
Characteristic
−40
°C
25
°C
85
°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IEE
Power Supply Current
85
105
135
85
105
135
85
105
135
mA
VOH
Output HIGH Voltage (Note 14)
−1145
−1020
−895
−1145
−1020
−895
−1145
−1020
−895
mV
VOL
Output LOW Voltage (Note 14)
−1995
−1820
−1695
−1995
−1820
−1695
−1995
−1820
−1695
mV
VIH
Input HIGH Voltage (Single−Ended)
−1225
−880
−1225
−880
−1225
−880
mV
VIL
Input LOW Voltage (Single−Ended)
−1995
−1625
−1995
−1625
−1995
−1625
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 15)
VEE+2.0
0.0
VEE+2.0
0.0
VEE+2.0
0.0
V
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
13. Input and output parameters vary 1:1 with VCC.
14. All loading with 50
W to VCC − 2.0 V.
15. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
Table 10. AC CHARACTERISTICS VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 16)
Symbol
Characteristic
−40
°C
25
°C
85
°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
VOUTpp
Output Voltage Amplitude @ 3 GHz
(Figure 4) (Note 17)
540
670
520
650
450
580
mV
tPLH,
tPHL
Propagation Delay to
CLK to Q, Q
Output Differential
MR to Q, Q
330
430
430
530
530
630
350
450
450
550
550
650
390
490
490
590
590
690
ps
tRR
Reset Recovery
MR to CLK
240
145
250
150
260
160
ps
tS
tH
Setup Time
D to CLK
Hold Time
CLK to D
80
80
40
40
80
80
40
40
80
80
40
40
ps
tPW
Minimum Pulse Rate
MR
400
400
400
ps
tSKEW
Within−Device Skew (Note 18)
Device−To−Device Skew (Note 19)
20
35
40
100
20
35
40
100
20
35
40
100
tJITTER
CLOCK Random Jitter (RMS)
@
v3.0 GHz (Figure 4)
0.2
1
0.2
1
0.2
1
ps
tr
tf
Output Rise/Fall Times
Q, Q
(20% − 80%)
100
100
150
150
250
250
110
110
160
160
260
260
130
130
180
180
280
280
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
16. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50
W to VCC − 2.0 V.
17. VOL and VOH specifications not guaranteed for Fmax testing.
18. Skew is measured between outputs under identical transitions and conditions on any one device.
19. Device−To−Device skew for identical transitions at identical VCC levels.


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