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KTD2060 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KTD2060 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor KTD2060 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V V(BR)EBO Emitter –Base Breakdown Voltage IE= 1mA; IB= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 30 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μ A hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 40 240 hFE-2 DC Current Gain IC= 3A; VCE= 5V 15 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 90 pF fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 8 MHz hFE-1 Classifications R O Y 40-80 70-140 120-240 |
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