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KTD998 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KTD998 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor KTD998 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) · Good Linearity of hFE · Complement to Type KTB778 APPLICATIONS · High power amplifier applications · Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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Descrizione simile - KTD998 |
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