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MJE350 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE350 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification 2 isc Website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJE350 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0mA; IB= 0 -300 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1.0mA; IE= 0 -300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1.0mA; IC= 0 -3 V VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA -1.0 V ICBO Collector Cutoff Current VCB= -300V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -0.1 mA hFE DC Current Gain IC= -50m A ; VCE= -10V 30 240 |
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