SI8401DB-T1 datasheet(1/5 Pages) VISHAY

Il numero della parte	SI8401DB-T1

Spiegazioni elettronici	P-Channel 20-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D New MICRO FOOTr Chipscale Packaging

Reduces Footprint Area Profile (0.62 mm) and

On-Resistance Per Footprint Area

D Pin Compatible to Industry Standard Si3443DV

APPLICATIONS

D PA, Battery and Load Switch

D Battery Charger Switch

D PA Switch

Si8401DB

Vishay Siliconix

Document Number: 71674

S-40384—Rev. F, 01-Mar-04

www.vishay.com

1

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

−20

0.065 @ VGS = −4.5 V

−4.9

−20

0.095 @ VGS = −2.5 V

−4.1

MICRO FOOT

S

G

D

P-Channel MOSFET

32

41

S

DD

G

Bump Side View

Backside View

Device Marking: 8401

xxx = Date/Lot Traceability Code

8401

xxx

Ordering Information: Si8401DB-T1

Si8401DB-T1—E3 (Lead Free)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

−20

V

Gate-Source Voltage

VGS

"12

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

−4.9

−3.6

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

−3.9

−2.8

A

Pulsed Drain Current

IDM

−10

A

continuous Source Current (Diode Conduction)a

IS

−2.5

Maximum Power Dissipationa

TA = 25_C

PD

2.77

1.47

W

Maximum Power Dissipationa

TA = 70_C

PD

1.77

0.94

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

Package Reflow Conditionsb

VPR

215/245c

_C

Package Reflow Conditionsb

IR/Convection

220/250c

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 5 sec

R

35

45

Maximum Junction-to-Ambienta

Steady State

RthJA

72

85

_C/W

Maximum Junction-to-Foot (drain)

Steady State

RthJF

16

20

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.

c.

Package reflow conditions for lead-free.

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