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SI7456DP-T1 Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI7456DP-T1 Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si7456DP Vishay Siliconix Document Number: 71603 S-31989—Rev. D, 13-Oct-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 500 1000 1500 2000 2500 3000 3500 0 102030 405060 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 6 12 18 24 30 36 0.00 0.01 0.02 0.03 0.04 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 50 V ID = 9.3 A ID - Drain Current (A) VGS = 10 V ID = 9.3 A VGS = 10 V VGS = 6.0 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0 2468 10 TJ = 150_C TJ = 25_C ID = 9.3 A 40 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) |
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