Motore di ricerca datesheet componenti elettronici |
|
SI3493DV-T1-E3 Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
|
SI3493DV-T1-E3 Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si3493DV Vishay Siliconix www.vishay.com 4 Document Number: 71936 S-41796—Rev. C, 04-Oct-04 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 24 40 8 16 Single Pulse Power Time (sec) 32 10−3 10−2 1 10 600 10−1 10−4 100 −0.2 −0.1 0.0 0.1 0.2 0.3 0.4 −50 −25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 360_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 1 100 600 10 10−1 10−2 TA = 25_C Safe Operating Area 100 1 0.1 1 10 100 0.01 10 0.1 TC = 25_C Single Pulse * rDS(on) Limited IDM Limited BVDSS Limited ID(on) Limited P(t) = 10 dc P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified |
Codice articolo simile - SI3493DV-T1-E3 |
|
Descrizione simile - SI3493DV-T1-E3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |