Motore di ricerca datesheet componenti elettronici |
|
SD210DE Scheda tecnica(PDF) 1 Page - Linear Integrated Systems |
|
SD210DE Scheda tecnica(HTML) 1 Page - Linear Integrated Systems |
1 / 2 page Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Linear Integrated Systems SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Product Summary Features Benefits Applications • Ultra-High Speed Switching—tON: 1 ns • High-Speed System Performance • Fast Analog Switch • Ultra-Low Reverse Capacitance: 0.2 pF • Low Insertion Loss at High Frequencies • Fast Sample-and-Holds • Low Guaranteed rDS @5 V • Low Transfer Signal Loss • Pixel-Rate Switching • Low Turn-On Threshold Voltage • Simple Driver Requirement • DAC Deglitchers • N-Channel Enhancement Mode • Single Supply Operation • High-Speed Driver Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and ± voltage capability from gate to substrate. A poly-silicon gate is featured for manufacturing reliability. For similar products see: quad array—SD5000/5400 series, and Zener protected—SD211DE/SST211 series. Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted) Gate-Drain, Gate-Source Voltage ......................................................... ± 40 V Gate-Substrate Voltage ......................................................................... ± 30 V Drain-Source Voltage (SD210DE) ....................................... 30 V (SD214DE) ....................................... 20 V Source-Drain Voltage (SD210DE) ....................................... 10 V (SD214DE) ....................................... 20 V Drain-Substrate Voltage (SD210DE) ....................................... 30 V (SD214DE) ....................................... 25 V Source-Substrate Voltage (SD210DE) ....................................... 15 V (SD214DE) ....................................... 25 V Drain Current ........................................................................................ 50 mA Lead Temperature (1/16" from case for 10 seconds) ............................. 3000C Storage Temperature .................................................................... -65 to 1500C Operating Junction Temperature ................................................. -55 to 1250C Power Dissipationa .................................................................................................................................... 300 mW Notes: a. Derate 3 mW/0C above 250C Part Number V(BR)DS Min(V) VGS(th) Max (V) SD210DE SD214DE SST210 SST214 30 20 30 20 1.5 1.5 1.5 1.5 rDS(on) Max(Ω) Crss Max (pF) 45 @ VGS = 10V 45 @ VGS = 10V 50 @ VGS = 10V 50 @ VGS = 10V tON Max (ns) 0.5 2 0.5 2 0.5 2 0.5 2 Top View SST210 SST214 Top View SD210DE SD214DE |
Codice articolo simile - SD210DE |
|
Descrizione simile - SD210DE |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |